2SC2880 2002-08-13 1 toshiba transistor silicon npn triple diffused type (pct process) 2SC2880 high voltage switching applications high voltage: v ceo = 150 v high transition frequency: f t = 120 mhz small flat package p c = 1.0 to 2.0 w (mounted on ceramic substrate) complementary to 2sa1200 maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 200 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 5 v collector current i c 50 ma base current i b 10 ma p c 500 collector power dissipation p c (note 1) 800 mw junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note 1: mounted on ceramic substrate (250 mm 2 0.8 t) unit: mm pw-mini jedec D jeita sc-62 toshiba 2-5k1a weight: 0.05 g (typ.)
2SC2880 2002-08-13 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 200 v, i e = 0 D D 0.1 a emitter cut-off current i ebo v eb = 5 v, i c = 0 D D 0.1 a dc current gain h fe (note 2) v ce = 5 v, i c = 10 ma 70 D 240 D collector-emitter saturation voltage v ce (sat) i c = 10 ma, i b = 1 ma D D 0.5 v base-emitter voltage v be v ce = 5 v, i c = 30 ma D D 1 v transition frequency f t v ce = 30 v, i c = 10 ma D 120 D mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 3.5 5.0 pf note 2: h fe classification o: 70 to 140, y: 120 to 240 marking a o type name h fe classification
2SC2880 2002-08-13 3 collector-emitter voltage v ce (v) i c ? v ce collector current i c (ma) base-emitter voltage v be (v) i c ? v be collector current i c (ma) collector current i c (ma) h fe ? i c dc current gain h fe collector current i c (ma) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (ma) h fe ? i c dc current gain h fe collector current i c (ma) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) 0 8 4 2 0 20 50 common emitter ta 25c 40 i b 100 a 6 12 10 10 30 2 ma 1 ma 500 a 300 a 200 a 500 0.5 3 100 10 1 30 300 100 50 30 10 common emitter ta 25c v ce 2 v 10 5 common emitter v ce 5 v ta 100c 25 25 500 0.5 3 100 10 1 30 300 100 50 30 10 common emitter ta 25c i c /i b 20 3 0.5 3 100 10 1 30 1 0.3 0.1 0.05 0.5 10 5 common emitter i c /i b 10 ta 100c 25 25 0.5 3 100 10 1 30 3 1 0.3 0.1 0.05 0.5 1.2 0 0.8 0.4 0.2 0 20 50 common emitter v ce 5 v 40 25 25 ta 100c 10 30 1.0 0.6
2SC2880 2002-08-13 4 f t ? i c transition frequency f t (mhz) collector current i c (ma) collector-emitter voltage v ce (v) safe operating area collector current i c (ma) common emitter ta 25c v ce 30 v 10 0.6 3 100 10 1 30 500 100 30 10 5 50 300 2 ambient temperature ta (c) p c ? ta collector power dissipation p c (mw) 0 0 800 200 400 600 20 40 60 80 100 120 140 160 1200 1000 (1) (2) (1) mounted on ceramic substrate (250 mm 2 0.8 t) (2) no heat sink 1 100 10 3 1 100 300 * : single nonrepetitive pulse ta 25c curves must be derated linearly with increase in temperature tested without a substrate 30 dc operation ta 25c 10 300 5 3 30 50 i c max (pulse) * i c max (continuous) 100 ms * 500 ms * v ceo max
2SC2880 2002-08-13 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
|
